Amanote Research

Amanote Research

    RegisterSign In

Surface-Activating-Bonding-Based Low-Resistance Si/Iii-v Junctions

Electronics Letters - United Kingdom
doi 10.1049/el.2013.1553
Full Text
Open PDF
Abstract

Available in full text

Categories
Electronic EngineeringElectrical
Date

June 20, 2013

Authors
J. LiangM. MorimotoS. NishidaN. Shigekawa
Publisher

Institution of Engineering and Technology (IET)


Related search

Hybrid III–V/Si Distributed-Feedback Laser Based on Adhesive Bonding

IEEE Photonics Technology Letters
Electronic EngineeringOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2012English

Electrical Properties of GaAs//indium Tin Oxide/Si Junctions for III–V-on-Si Hybrid Multijunction Cells

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2018English

Surface-Activated-Bonding Based InGaP-on-Si Double Junction Cells

2013English

Monolithic III-V/Si Integration

2008English

III-V Nanowire-Based Solar Cells on Si and Graphene

2013English

Low Temperature Bonding for 3D Integration-Surface Activated Bonding (SAB)

Hyomen Kagaku
2014English

Low Voltage I–V Characteristics in Magnetic Tunneling Junctions

Applied Physics Letters
AstronomyPhysics
2002English

Properties of Ferromagnetic Tunnel Junctions With Low Resistance

Journal of the Magnetics Society of Japan
2001English

Heterogeneously Integrated III-V/Si Multi-Wavelength Laser Based on a Ring Resonator Array Multiplexer

2012English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy