Study of Optimization of Al/a-SiC:H Schott Ky Diodes by Means of Annealing Process of A-SiC:H Thin Films Sputtered at Three Different Hydrogen Flow Rates
Journal of Engineering Science and Technology Review - Greece
doi 10.25103/jestr.011.02
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Date
August 1, 2011
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Eastern Macedonia and Thrace Institute of Technology