Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped N -Type Ge

Physical Review Letters - United States
doi 10.1103/physrevlett.118.267402
Full Text
Abstract

Available in full text

Date
Authors
Publisher

American Physical Society (APS)

Related search

Spin Drift in Highly Doped N-Type Si

Applied Physics Letters
AstronomyPhysics
2014English

Optical Second Harmonic Observation of the Ge/Ge-Oxide Interface.

SHINKU
1999English

Quantum Cores of Optical Phase Singularities

Journal of Optics A: Pure and Applied Optics
2004English

Photoluminescence Line Shape Analysis of Highly N‐Type Doped Zincblende GaN

Physica Status Solidi (B): Basic Research
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2019English

Excellent Passivation of Highly Doped P-Type Si Surfaces by the Negative-Charge-Dielectric Al2O3

Applied Physics Letters
AstronomyPhysics
2007English

Control of Matter Defects Using Optical Phase Singularities

SPIE Newsroom
2010English

Temperature Dependence Dielectric Behavior of Ge-Doped Lead Scandium Tantalate Single Crystals

Journal of Theoretical and Applied Physics
AstronomyPhysics
2012English

Assessment of Ge-Doped Optical Fibre as a TL-mode Detector

Journal of Non-Crystalline Solids
Condensed Matter PhysicsMaterials ChemistryOpticalMagnetic MaterialsCompositesElectronicCeramics
2013English

Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

Crystal Growth and Design
Materials ScienceChemistryCondensed Matter Physics
2012English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy