Amanote Research
Register
Sign In
Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates
doi 10.1021/acsaem.7b00199.s001
Full Text
Open PDF
Abstract
Available in
full text
Date
Unknown
Authors
Unknown
Publisher
American Chemical Society (ACS)
Related search
Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode
Materials
Materials Science
Condensed Matter Physics
Synthesis of Polytypic Gallium Phosphide and Gallium Arsenide Nanowires and Their Application as Photodetectors
ACS Omega
Chemistry
Chemical Engineering
Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition
Effect of the Gaseous Atmosphere in GaAs Films Grown by Close-Spaced Vapor Transport Technique
Crystals
Materials Science
Inorganic Chemistry
Chemical Engineering
Condensed Matter Physics
High Optical Quality Polycrystalline Indium Phosphide Grown on Metal Substrates by Metalorganic Chemical Vapor Deposition
Journal of Applied Physics
Astronomy
Physics
Preparation of Epitaxial Bi4Ti3O12 Films on Sapphire Substrates by Chemical Vapor Deposition.
Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Alloys
Industrial
Mechanical Engineering
Metals
Materials Chemistry
Manufacturing Engineering
CuIn0.7Ga0.3Se2 Thin Films’ Properties Grown by Close-Spaced Vapor Transport Technique for Second-Generation Solar Cells
Materials for Renewable and Sustainable Energy
Optical
Renewable Energy
Fuel Technology
Sustainability
Materials Chemistry
Magnetic Materials
Electronic
the Environment
Correction to Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires
ACS Nano
Materials Science
Nanoscience
Engineering
Nanotechnology
Astronomy
Physics
Control of Gallium Oxide Growth on Liquid Metal Eutectic Gallium/Indium Nanoparticles via Thiolation
