Selective Molecular Beam Epitaxy Growth of Size- And Position-Controlled GaN∕AlGaN Nanowires on Nonplanar (0001) Substrates and Its Growth Mechanism

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
doi 10.1116/1.2214700
Full Text
Abstract

Available in full text

Date
Authors
Publisher

American Vacuum Society

Related search

Gallium Desorption Kinetics on (0001) GaN Surface During the Growth of GaN by Molecular-Beam Epitaxy

Applied Physics Letters
AstronomyPhysics
2006English

Growth Kinetics and Modeling of Selective Molecular Beam Epitaxial Growth of GaAs Ridge Quantum Wires on Pre-Patterned Nonplanar Substrates

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2004English

Morphology, Polarity, and Lateral Molecular Beam Epitaxy Growth of GaN on Sapphire

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
1999English

Growth of Cubic GaN by Metal Organic Molecular Beam Epitaxy.

SHINKU
2000English

The Adsorption-Controlled Growth of LuFe2O4 by Molecular-Beam Epitaxy

Applied Physics Letters
AstronomyPhysics
2012English

Adsorption-Controlled Growth of BiMnO3 Films by Molecular-Beam Epitaxy

Applied Physics Letters
AstronomyPhysics
2010English

Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6h-SiC(0001) and Si(111) Substrates

MRS Internet Journal of Nitride Semiconductor Research
2001English

Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors

Scientific Reports
Multidisciplinary
2018English

Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy