The Effect of Radiation on Ion-Implanted Silicon Detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Netherlands
doi 10.1016/0168-9002(86)90826-0
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Elsevier BV

Related search

Evaluation of Ion-Implanted-Silicon Detectors for Use in Intraoperative Positron-Sensitive Probes

Medical Physics
MedicineNuclear MedicineRadiologyImagingBiophysics
1996English

Silicon Carbide Microstrip Radiation Detectors

Micromachines
ControlSystems EngineeringElectricalMechanical EngineeringElectronic Engineering
2019English

Simulation, Design and Fabrication of Large Area Implanted Silicon Two-Dimensional Position Sensitive Radiation Detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
High Energy PhysicsInstrumentationNuclear
1991English

Electron Microscopy Studies of Ion Implanted Silicon

1975English

The Effect of Preamorphization Energy on Ultrashallow Junction Formation Following Ultrahigh-Temperature Annealing of Ion-Implanted Silicon

Journal of Applied Physics
AstronomyPhysics
2005English

Studies of Ionizing Radiation Effects on STAR Silicon Drift Detectors

IEEE Transactions on Nuclear Science
Electronic EngineeringNuclearNuclear EnergyHigh Energy PhysicsEngineeringElectrical
1998English

Radiation Hard Silicon Strips Detectors for the SLHC

2009English

Radiation Damage in ZnO Ion Implanted at 15K

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High Energy PhysicsInstrumentationNuclear
2009English

The Nature and Habit Planes of Defects in P+ Ion-Implanted Silicon

Physica Status Solidi (a)
1974English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy