Synergistic Regulation of Phonon and Electronic Properties to Improve the Thermoelectric Performance of Chalcogenide CuIn 1− X Ga X Te 2 : Y InTe ( X = 0–0.3) With in Situ Formed Nanoscale Phase InTe

Advanced Electronic Materials - Germany
doi 10.1002/aelm.201901141
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Wiley

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