High-Mobility Inverted Selectively Doped Heterojunctions

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
doi 10.1116/1.584386
Full Text
Abstract

Available in full text

Date
Authors
Publisher

American Vacuum Society

Related search

Publisher Correction: Nanoscale Percolation in Doped BaZrO3 for High Proton Mobility

Nature Materials
Mechanics of MaterialsMaterials ScienceChemistryCondensed Matter PhysicsMechanical Engineering
2020English

Magneto‐Hall Characterization of Delta‐doped Pseudomorphic High Electron Mobility Transistor Structures

Journal of Applied Physics
AstronomyPhysics
1994English

Metal Halide Perovskite and Phosphorus Doped gC3N4 Bulk Heterojunctions for Air-Stable Photodetectors

English

DX Centers in AlAs and GaAs-AlAs Selectively Doped Superlattices

Journal de Physique III
1991English

An Origin Behind Rashba Spin Splitting Within Inverted Doped sGe Heterostructures

Applied Physics Letters
AstronomyPhysics
2017English

Summary Abstract: Theoretical and Experimental Capacitance–voltage Behavior of Modulation-Doped Al0.3Ga0.7As/GaAs Heterojunctions

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
1986English

CCl4‐doped Semi‐insulating InP as a Buffer Layer in GaInAs/InP High Electron Mobility Transistors

Applied Physics Letters
AstronomyPhysics
1996English

High Mobility Approaching the Intrinsic Limit in Ta-Doped SnO2 Films Epitaxially Grown on TiO2 (001) Substrates

Scientific Reports
Multidisciplinary
2020English

Selectively Reduced Contrast Sensitivity in High Schizotypy

Experimental Brain Research
Neuroscience
2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy