Current-Voltage Characteristics of Semiconductor/Ferromagnet Junctions in the Spin-Blockade Regime

Physical Review B
doi 10.1103/physrevb.77.073301
Full Text
Abstract

Available in full text

Date
Authors
Publisher

American Physical Society (APS)

Related search

Suppression of Spin Transport in Ferromagnet/Oxide/Semiconductor Junctions by Inserting Magnetic Impurities

2015English

Spin Transport in Ferromagnet/Semiconductor/Ferromagnet Structures With Cubic Dresselhaus Spin-Orbit-Interaction

Journal of Applied Physics
AstronomyPhysics
2012English

Interface Magnetism and Spin Wave Scattering in Ferromagnet-Insulator-Ferromagnet Tunnel Junctions

Physical Review Letters
AstronomyPhysics
1998English

Current–voltage Characteristics of Manganite–titanite Perovskite Junctions

Beilstein Journal of Nanotechnology
Electronic EngineeringMaterials ScienceNanoscienceElectricalNanotechnologyAstronomyPhysics
2015English

Soft Reverse Current-Voltage Characteristics in V2O5 Nanofiber Junctions

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2001English

Spin Polarized Conductance in Ferromagnet / Insulator / Conventional Superconductor Junctions

Journal of Physics: Conference Series
AstronomyPhysics
2012English

Interference Effects in the Coulomb Blockade Regime: Current Blocking and Spin Preparation in Symmetric Nanojunctions

Physical Review B
2010English

Elastic Scattering and the Current‐voltage Characteristics of Superconducting Nb‐InAs‐Nb Junctions

Applied Physics Letters
AstronomyPhysics
1993English

Spin Torque in Semiconductor Single Planar Tunnel Junctions

Acta Physica Polonica A
AstronomyPhysics
2008English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy