Short Exciton Radiative Lifetime in Submonolayer InGaAs∕GaAs Quantum Dots

Applied Physics Letters - United States
doi 10.1063/1.2839312
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Strain-Inducedg-Factor Tuning in Single InGaAs/GaAs Quantum Dots

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2016English

InGaAs/GaAs Three-Dimensionally-Ordered Array of Quantum Dots

Applied Physics Letters
AstronomyPhysics
2003English

Exciton Localization by Potential Fluctuations at the Interface of InGaAs/GaAs Quantum Wells

Physical Review B
1996English

Well-Width Dependence of the Exciton-Phonon Scattering in Thin InGaAs/GaAs Single Quantum Wells

English

Charged Exciton Dynamics in GaAs Quantum Wells

Physical Review B
1998English

Time-Resolved Photoluminescence of Type-Ii Ga(As)Sb/GaAs Quantum Dots Embedded in an InGaAs Quantum Well

Nanotechnology
Mechanics of MaterialsElectronic EngineeringMechanical EngineeringMaterials ScienceNanoscienceElectricalBioengineeringNanotechnologyChemistry
2008English

Structural and Luminescence Characteristics of Cycled Submonolayer InAs/GaAs Quantum Dots With Room-Temperature Emission at 1.3 Μm

Journal of Applied Physics
AstronomyPhysics
1999English

Optical Anisotropy in Type-Ii ZnTe/ZnSe Submonolayer Quantum Dots

Journal of Applied Physics
AstronomyPhysics
2016English

Segregation in InGaAs/GaAs Quantum Wells: MOCVD Versus MBE

Microscopy and Microanalysis
Instrumentation
2003English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy