Anomalous Magnetoresistance Due to Longitudinal Spin Fluctuations in a Jeff = 1/2 Mott Semiconductor

Nature Communications - United Kingdom
doi 10.1038/s41467-019-13271-6
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Springer Science and Business Media LLC

Related search

Harnessing Nuclear Spin Polarization Fluctuations in a Semiconductor Nanowire

Nature Physics
AstronomyPhysics
2013English

Negative Magnetoresistance Due to Conductivity Fluctuations in Films of the Topological Semimetal Cd3As2

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2017English

Conductivity Mismatch and Voltage Dependence of Magnetoresistance in a Semiconductor Spin Injection Device

Journal of Applied Physics
AstronomyPhysics
2010English

Gate-Tunable Large Magnetoresistance in an All-Semiconductor Spin Valve Device

Nature Communications
AstronomyGeneticsMolecular BiologyBiochemistryChemistryPhysics
2017English

Anomalous Magnetoresistance of Magnetic Multilayers

Journal of Physics Condensed Matter
Materials ScienceCondensed Matter Physics
2000English

Hidden Spin Current in Doped Mott Antiferromagnets

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2018English

Breakdown of a Magnetization Plateau in Ferrimagnetic Mixed Spin-(1/2,s) Heisenberg Chains Due to a Quantum Phase Transition Towards the Luttinger Spin Liquid

Acta Physica Polonica A
AstronomyPhysics
2017English

Magnetoresistance in Semiconductor-Metal Hybrids for Power Applications

English

Almost Pure Jeff=12 Mott State of In2Ir2O7 in the Limit of Reduced Intersite Hopping

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2020English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy