Reduction of Residual Impurities in Homoepitaxial M -Plane (101¯0) GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy (Phys. Status Solidi RRL 8/2018)

Physica Status Solidi - Rapid Research Letters - Germany
doi 10.1002/pssr.201870324
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Wiley

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