Low Vπ High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an N-I-P-N Structure

doi 10.1109/cleoe-eqec.2009.5194744
Full Text
Abstract

Available in full text

Date
Authors
Publisher

IEEE

Related search

Ultrafast GaAs/AlGaAs Traveling Wave Electrooptic Modulators

2001English

Voltage-Controlled Three Terminal GaAs Negative Differential Resistance Device Using N+-I-P+-I-N+ Structure

IEE Proceedings G Circuits, Devices and Systems
1990English

High-Speed, Low-Power Optical Modulators in Silicon

2013English

RF Characteristics of GaAs/InGaAsN/GaAs P-N-P Double Heterojunction Bipolar Transistors

English

Low-Operation Voltage and High-Speed Silicon Ring Optical Modulator With P/N Junctions Along Waveguide

2011English

Prediction of Radiated Emissions From High Speed PCB Traces Using Travelling Wave Antenna Model

2014English

Characterization of GaAs-based N-N and P-N Interface Junctions Prepared by Direct Wafer Bonding

Journal of Applied Physics
AstronomyPhysics
2002English

General Equations for the Induced Phase Shift in Resonant Electrooptic Modulators

IEEE Photonics Technology Letters
Electronic EngineeringOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2005English

Distortion in Linearized Electrooptic Modulators

IEEE Transactions on Microwave Theory and Techniques
Electronic EngineeringRadiationElectricalCondensed Matter Physics
1995English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy