Effects of Temperature on Intra-Band Photoluminescence of Zinc Oxide (ZnO) Semiconductor

Universal Journal of Applied Science
doi 10.13189/ujas.2020.070101
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Horizon Research Publishing Co., Ltd.

Related search

Effects of Transition Energy on Intra-Band Photoluminescence of Zinc Oxide (ZnO) Semiconductor Under Low Injection Level

Universal Journal of Materials Science
2019English

Annealing Effects on the Photoluminescence of Terbium Doped Zinc Oxide Films

Thin Solid Films
SurfacesAlloysOpticalInterfacesMetalsMaterials ChemistryMagnetic MaterialsFilmsCoatingsElectronic
2014English

Effects of Surface Oxide Formation on Germanium Nanowire Band-Edge Photoluminescence

Applied Physics Letters
AstronomyPhysics
2013English

Temperature Effects in the Photoluminescence of Semiconductor Quantum Dots

2020English

Investigation on Room Temperature Photoluminescence of Pure and Aluminum Doped Zinc Oxide Nanoparticles

Materials Science-Poland
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2015English

Low-Temperature Photoluminescence Spectra of Layered Semiconductor TlGaS2

Solid State Communications
Materials ChemistryChemistryCondensed Matter Physics
1998English

Effects of Zinc Precursor, Basicity and Temperature on the Aqueous Synthesis of ZnO Nanocrystals

South African Journal of Chemistry
Chemistry
2018English

Band-Modulation of MgZnO/ZnO Metal-Semiconductor-Metal Photodetectors

ITM Web of Conferences
2018English

Visible Photoluminescence of Ultrathin ZnO Nanowire at Room Temperature

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy