Room Temperature Luminescence of Passivated InGaN Quantum Dots Formed by Quantum-Sized-Controlled Photoelectrochemical Etching

Applied Physics Letters - United States
doi 10.1063/1.5046857
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Polariton Lasing in InGaN Quantum Wells at Room Temperature

Opto-Electronic Advances
2019English

Optical Properties of InGaN Quantum Dots

Superlattices and Microstructures
Electronic EngineeringElectricalCondensed Matter PhysicsMaterials Science
2004English

Luminescence Quantum Beats of Strain-Induced GaAs Quantum Dots

Physical Review B
2003English

Optical Properties of InGaN Quantum Dots Grown by SiNx Nanomasks

Journal of Applied Physics
AstronomyPhysics
2007English

Ultraviolet Photoluminescence of ZnO Quantum Dots Sputtered at Room-Temperature

Optics Express
OpticsAtomicMolecular Physics,
2011English

Fabrication of Ultralow-Density Quantum Dots by Droplet Etching Epitaxy

Journal of Materials Research
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2017English

Self-Assembled Molecular-Electronic Films Controlled by Room Temperature Quantum Interference

Chem
BiochemistryEnvironmental ChemistryMaterials ChemistryChemistryChemical Engineering
2019English

Structural and Luminescence Characteristics of Cycled Submonolayer InAs/GaAs Quantum Dots With Room-Temperature Emission at 1.3 Μm

Journal of Applied Physics
AstronomyPhysics
1999English

PbSe Quantum Dots-Based Chemiresistors for Room-Temperature NO 2 Detection

Sensors and Actuators, B: Chemical
SurfacesElectronic EngineeringAlloysCondensed Matter PhysicsInstrumentationMaterials ChemistryMetalsOpticalElectricalMagnetic MaterialsFilmsCoatingsElectronic
2018English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy