Si Concentration Dependence of Structural Inhomogeneities in Si-Doped AlxGa1−xN/AlyGa1−yN Multiple Quantum Well Structures (X = 0.6) and Its Relationship With Internal Quantum Efficiency

Journal of Applied Physics - United States
doi 10.1063/1.4904847
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing


Related search