Si Concentration Dependence of Structural Inhomogeneities in Si-Doped AlxGa1−xN/AlyGa1−yN Multiple Quantum Well Structures (X = 0.6) and Its Relationship With Internal Quantum Efficiency
Journal of Applied Physics - United States
doi 10.1063/1.4904847
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Date
December 21, 2014
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AIP Publishing