Optical and Microstructural Studies of Atomically Flat Ultrathin In-Rich InGaN∕GaN Multiple Quantum Wells

Journal of Applied Physics - United States
doi 10.1063/1.2874494
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Calculation of Electric Field and Optical Transitions in InGaN∕GaN Quantum Wells

Journal of Applied Physics
AstronomyPhysics
2005English

Dependence of Carrier Localization in InGaN∕GaN Multiple-Quantum Wells on Well Thickness

Applied Physics Letters
AstronomyPhysics
2006English

Band Structure of Interdiffused InGaN/GaN Quantum Wells

1998English

High Efficiency InGaN/GaN Light Emitting Diodes With Asymmetric Triangular Multiple Quantum Wells

Applied Physics Letters
AstronomyPhysics
2014English

Strain Induced Variations in Band Offsets and Built-In Electric Fields in InGaN/GaN Multiple Quantum Wells

Journal of Applied Physics
AstronomyPhysics
2013English

Does in Form In-Rich Clusters in InGaN Quantum Wells?

Philosophical Magazine
Condensed Matter Physics
2007English

Effect of Growth Interruption on Optical Properties of In-Rich InGaN∕GaN Single Quantum Well Structures

Journal of Applied Physics
AstronomyPhysics
2006English

Comparison of Electrostatic and Localized Plasmon Induced Light Enhancement in Hybrid InGaN/GaN Quantum Wells

Applied Physics Letters
AstronomyPhysics
2014English

Nanoscopic Recombination Processes in InGaN/GaN Quantum Wells Emitting Violet, Blue, and Green Spectra

Physical Review B
2008English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy