Amanote Research

Amanote Research

    RegisterSign In

A Feasibility Study of UV Laser Assisted 3d-Atom Probe Analysis of AlGaN/GaN HEMTs

doi 10.21236/ada582173
Full Text
Open PDF
Abstract

Available in full text

Date

March 5, 2013

Authors
Kazuhiro Hono
Publisher

Defense Technical Information Center


Related search

Hydrodynamic Modeling of AlGaN/GaN HEMTs

English

Nanostructure Analysis by Laser Assisted Atom Probe Tomography

Vacuum and Surface Science
2018English

A Drain-Lag Model for AlGaN/GaN Power HEMTs

IEEE MTT-S International Microwave Symposium Digest
Electronic EngineeringRadiationElectricalCondensed Matter Physics
2007English

Multiband GaN/AlGaN UV Photodetector

Acta Physica Polonica A
AstronomyPhysics
2006English

Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate

2010English

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers

2010English

Effect of GaN Growth Pressure on the Device Characteristics of AlGaN/ GaN HEMTs on Silicon

2009English

The New Laser Assisted Wide Angle Tomographic Atom Probe

Microscopy and Microanalysis
Instrumentation
2006English

Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications

Journal of the Korean Physical Society
AstronomyPhysics
2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy