Amanote Research
Register
Sign In
Synthesis and Characterization of Ge2Sb2Te5 Nanowires With Memory Switching Effect
doi 10.1021/ja065938s.s001
Full Text
Open PDF
Abstract
Available in
full text
Date
Unknown
Authors
Unknown
Publisher
American Chemical Society (ACS)
Related search
Germanium Telluride Nanowires and Nanohelices With Memory-Switching Behavior
Synthesis and Characterization of Phase-Change Nanowires
Liquid-Phase Synthesis and Characterization of Bi2Te3 Nanowires
Advances in Condensed Matter Physics
Synthesis and Characterization of (Zinc-Layered-Gallate) Nanohybrid Using Structural Memory Effect
Materials Chemistry and Physics
Materials Science
Condensed Matter Physics
RESET Failure Analysis of Phase Change Memory Based on Ge2Sb2Te5
IEICE Electronics Express
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
Resistive Switching in Si2Te3 Nanowires
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Long Memory With Markov-Switching GARCH
Economics Letters
Economics
Finance
Econometrics
Synthesis and Characterization of High-Purity Bismuth Nanowires via Seed-Assisted Growth Approach
Journal of Electronic Materials
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic
Effect of Mn Doping on Solvothermal Synthesis of CdS Nanowires
Materials Sciences and Applications
