Amanote Research

Amanote Research

    RegisterSign In

Exciton Binding Energies in ZnSSe/MgSSe Quantum Wells Lattice Matched to GaAs Substrates

e-Journal of Surface Science and Nanotechnology - Japan
doi 10.1380/ejssnt.2011.219
Full Text
Open PDF
Abstract

Available in full text

Categories
SurfacesMechanics of MaterialsCondensed Matter PhysicsInterfacesNanoscienceBioengineeringFilmsBiotechnologyCoatingsNanotechnology
Date

January 1, 2011

Authors
Chikara OnoderaMasaaki Yoshida
Publisher

Surface Science Society Japan


Related search

Charged Exciton Dynamics in GaAs Quantum Wells

Physical Review B
1998English

Selective Exciton Formation in Thin GaAs-AlGaAs Quantum Wells

Le Journal de Physique IV
1993English

Effect of Exciton-Longitudinal Optical Phonon Interaction Οn Exciton Binding Energies in ZnS/MgxBeyZn1-x-yS Quantum Wells

Acta Physica Polonica A
AstronomyPhysics
2010English

Phonon-Assisted Exciton Formation and Relaxation in GaAs/AlxGa1−xAs Quantum Wells

Physical Review B
1997English

Exciton Condensation in Quantum Wells

Low Temperature Physics
AstronomyPhysics
2006English

Spatially Dependent Screening Calculation of Binding Energies of Hydrogenic Impurity States in GaAs-Ga1−xAlxAs Quantum Wells

Physical Review B
1988English

Exciton Localization by Potential Fluctuations at the Interface of InGaAs/GaAs Quantum Wells

Physical Review B
1996English

Pressure Dependence of Exciton Binding Energy in GaN/AlxGa1 - xN Quantum Wells

Acta Physica Polonica A
AstronomyPhysics
2011English

Localized Excitons in cubicZn1−xCdxS Lattice Matched to GaAs

Physical Review B
1994English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy