Amanote Research
Register
Sign In
High-Mobility N-Channel Organic Transistor of Solution Processed Perylene-Diimide Derivative Single Crystals on PS/SiO2 Dielectric
doi 10.7567/ssdm.2014.k-1-5
Full Text
Open PDF
Abstract
Available in
full text
Date
September 9, 2014
Authors
S. Mondal
W.H. Lin
Y.C. Chen
B.H. Chen
T.F. Yang
M.Y. Kuo
Publisher
The Japan Society of Applied Physics
Related search
High Mobility N-Type Thin-Film Transistors Based on N,n′-Ditridecyl Perylene Diimide With Thermal Treatments
Applied Physics Letters
Astronomy
Physics
The High-Mobility Bended N-Channel Silicon Nanowire Transistor
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Single-Molecule Break Junctions Based on a Perylene-Diimide Cyano-Functionalized (PDI8-CN2) Derivative
Stable Solution-Processed High-Mobility Substituted Pentacene Semiconductors
Low Temperature Solution Processed SiO2 Insulator Thin Films for Organic FET
Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors
Dielectric Effect: Dielectric Selection for Solution‐Processed High‐Mobility TIPS‐Pentacene Microwire Field‐Effect Transistors (Adv. Mater. Interfaces 13/2019)
Advanced Materials Interfaces
Mechanics of Materials
Mechanical Engineering
Solution-Processed C60 Field-Effect Transistors With High Mobility
High-Energy Photon Spectroscopy Using All Solution-Processed Heterojunctioned Surface-Modified Perovskite Single Crystals
