Technology Computer-Aided Design Simulation Study for a Strained InGaAs Channel N-Type Metal-Oxide-Semiconductor Field-Effect Transistor With a High-K Dielectric Oxide Layer and a Metal Gate Electrode
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics - United States
doi 10.1116/1.3578466
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May 1, 2011
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American Vacuum Society