Extraction of Large Valence-Band Energy Offsets and Comparison to Theoretical Values for Strained-Si/Strained-Ge Type-Ii Heterostructures on Relaxed SiGe Substrates

Physical Review B
doi 10.1103/physrevb.85.205308
Full Text
Abstract

Available in full text

Date
Authors
Publisher

American Physical Society (APS)

Related search

Effect in Coherently Strained B-Doped (001)SiGe/Si Heterostructures

Acta Physica Polonica A
AstronomyPhysics
1995English

Formation of Uniaxial Strained Ge via Control of Dislocation Alignment in Si/Ge Heterostructures

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

Island Scaling Effects on Photoluminescence of Strained SiGe/Si (100)

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2004English

Improved Hole Mobilities and Thermal Stability in a Strained‐Si∕strained‐Si1−yGey∕strained‐Si Heterostructure Grown on a Relaxed Si1−xGex Buffer

Applied Physics Letters
AstronomyPhysics
2005English

Defect Identification in Strained Si/SiGe Heterolayers for Device Applications

Journal of Physics D: Applied Physics
SurfacesUltrasonicsCondensed Matter PhysicsAcousticsOpticalMagnetic MaterialsFilmsCoatingsElectronic
2009English

Low Temperature Effect on Strained and Relaxed Ge pFinFETs STI Last Processes

ECS Meeting Abstracts
2016English

Study on Axial and Radial Heterostructures of Si-Ge and Si-SiGe Nanowires

Microscopy and Microanalysis
Instrumentation
2005English

Amorphization Threshold in Si-Implanted Strained Sige Alloy Layers

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
1994English

New Optical Transitions in Strained Si-Ge Superlattices

Physical Review B
1987English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy