Facile Formation of High-Quality InGaN/GaN Quantum-Disks-In-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters

doi 10.1021/acs.nanolett.5b04190.s002
Full Text
Abstract

Available in full text

Date

Unknown

Authors

Unknown

Publisher

American Chemical Society (ACS)

Related search

High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

Applied Physics Letters
AstronomyPhysics
2000English

High Efficiency InGaN/GaN Light Emitting Diodes With Asymmetric Triangular Multiple Quantum Wells

Applied Physics Letters
AstronomyPhysics
2014English

Promising Single-Photon Emitters With Reconfined InGaN/GaN Nanowire Quantum Dots

Quantum Engineering
2019English

Health-Friendly High-Quality White Light Using Violet-Green-Red Laser and InGaN Nanowires-Based True Yellow Nanowires Light-Emitting Diodes

2017English

Catalyst-Free Growth of High-Optical Quality GaN Nanowires by Metal-Organic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2011English

InGaN/GaN Quantum Well Interconnected Microdisk Light Emitting Diodes

Applied Physics Letters
AstronomyPhysics
2000English

Metal-Free Graphene as Transparent Electrode for GaN-Based Light-Emitters

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2013English

Growth of Sparse Arrays of Narrow GaN Nanorods Hosting Spectrally Stable InGaN Quantum Disks

Optics Express
OpticsAtomicMolecular Physics,
2012English

Vacuum Deposition of High Quality Metal Films on Porous Substrates

Vacuum
SurfacesInstrumentationCoatingsCondensed Matter PhysicsFilms
1985English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy