Random Interface-Traps-Induced Characteristic Fluctuation in 16-Nm High-K/Metal Gate CMOS Device and Digital Circuit

doi 10.7567/ssdm.2011.p-3-22l
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

Intermodulation Linearity in High-K/Metal Gate 28 Nm RF CMOS Transistors

Electronics (Switzerland)
ControlElectronic EngineeringSignal ProcessingComputer NetworksSystems EngineeringHardwareCommunicationsElectricalArchitecture
2015English

The Improvement of Reliability of High-K/Metal Gate pMOSFET Device With Various PMA Conditions

Active and Passive Electronic Components
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2012English

High Performance High-Κ/Metal Gate Complementary Metal Oxide Semiconductor Circuit Element on Flexible Silicon

Applied Physics Letters
AstronomyPhysics
2016English

Recent Trends in CMOS Reliability: From Individual Traps to Circuit Simulations

2011English

Mitigation of CMOS Variability With Metal Gate

2008English

Interface Properties Study on SiC MOS With High-K Hafnium Silicate Gate Dielectric

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

180 Nm Metal Gate, High-K Dielectric, Implant-Free III–V MOSFETs With Transconductance of Over 425 [Micro Sign]S∕[micro Sign]m

Electronics Letters
Electronic EngineeringElectrical
2007English

OTA-based High Frequency CMOS Multiplier and Squaring Circuit

2009English

A Fast Lock-In All-Digital Phase-Locked Loop in 40-Nm CMOS Technology

IEICE Electronics Express
Electronic EngineeringCondensed Matter PhysicsOpticalElectricalMagnetic MaterialsElectronic
2016English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy