Temperature Analysis and Characteristics of Highly Strained InGaAs-GaAsP-GaAs (Λ ≪ 1.17 Μm) Quantum-Well Lasers
IEEE Journal of Quantum Electronics - United States
doi 10.1109/jqe.2002.1005415
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Date
June 1, 2002
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Institute of Electrical and Electronics Engineers (IEEE)