DEVICE STRUCTURES BASED ON Β-FeSi2 (OVERVIEW)

Electronic engineering. Series 2. Semiconductor device
doi 10.36845/2073-8250-2018-249-2-4-18
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Joint Stock Company Scientific and Production Enterprise 'Pulsar'

Related search

Itinerant Magnetism in Doped Semiconducting Β-FeSi2 and CrSi2

Scientific Reports
Multidisciplinary
2013English

Enhancement of Photoluminescence From Cu-Doped Β-FeSi2/Si Heterostructures

2015English

Effects of Mechanical Alloying and Grinding on the Preparation and Thermoelectric Properties of Β-FeSi2 (Overview)

Materials Transactions, JIM
1995English

Growth of P-Type Β-FeSi2 Polycrystalline Films by RF Magnetron Sputtering

2017English

A Review on Power MOSFET Device Structures

International Journal for Research in Applied Science and Engineering Technology
2017English

Comment on ‘‘Effect of Sub‐band‐gap Illumination on Β‐FeSi2/N‐type Si Diodes Under Reverse Bias’’

Applied Physics Letters
AstronomyPhysics
1993English

Massive Integration of Inorganic Nanowire-Based Structures on Solid Substrates for Device Applications

Journal of Materials Chemistry
2009English

Preparation of Thermoelectric Β-FeSi2 Doped With Al and Mn by Mechanical Alloying (Overview)

Materials Transactions, JIM
1995English

Electric Properties of Carbon-Doped N-Type Β-FeSi2/P-Type Si Heterojunction Diodes

2015English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy