Excess Carrier Decay Peculiarities Caused by Disorder in Dislocation-Rich SiGe and GaN Layered Structures

Lithuanian Journal of Physics - Lithuania
doi 10.3952/lithjphys.45608
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Lithuanian Academy of Sciences

Related search

Dislocation Scattering in GaN

Physical Review Letters
AstronomyPhysics
1999English

Dislocation-Free GaN Nanowires

Microscopy and Microanalysis
Instrumentation
2003English

Carrier Dynamics in Bulk GaN

Journal of Applied Physics
AstronomyPhysics
2012English

Dislocation Mobility in GaN Nanowire Arrays by In-Situ Heating in the TEM

2016English

Formation of Different Shell Structures in Lithium-Rich Layered Oxides and Their Influence on Electrochemical Properties

RSC Advances
ChemistryChemical Engineering
2018English

Effective Compliant Substrate for Low-Dislocation Relaxed SiGe Growth

Applied Physics Letters
AstronomyPhysics
2001English

Congenital Hypothyroidism Caused by Excess Prenatal Maternal Iodine Ingestion

Journal of Pediatrics
Child HealthPediatricsPerinatology
2012English

Microcavity Effects in GaN Epitaxial Films and in Ag/GaN/Sapphire Structures

Applied Physics Letters
AstronomyPhysics
1997English

Effect of Growth Interruption on Optical Properties of In-Rich InGaN∕GaN Single Quantum Well Structures

Journal of Applied Physics
AstronomyPhysics
2006English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy