Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides

MRS Internet Journal of Nitride Semiconductor Research
doi 10.1557/s1092578300000053
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Cambridge University Press (CUP)

Related search

Ion Implantation and Annealing Studies in III-V Nitrides

1996English

Defect Structure in Transition Metal Oxides.

Nihon Kessho Gakkaishi
1984English

Hydrogen in Group-Iii Nitrides: An Ion Beam Analysis Study

2011English

Rare Earth Doped III-nitrides for Optoelectronics

EPJ Applied Physics
InstrumentationOpticalElectronicCondensed Matter PhysicsMagnetic Materials
2006English

III-V Nitrides for Electronic and Optoelectronic Applications

Proceedings of the IEEE
Electronic EngineeringElectricalComputer Science
1991English

First-Principles Study of High-Field-Related Electronic Behavior of Group-Iii Nitrides

Physical Review B
2014English

From Quantum to Continuum Mechanics: Studying the Fracture Toughness of Transition Metal Nitrides and Oxynitrides

Materials Research Letters
Materials Science
2017English

New Catalysts for Coal Processing: Metal Carbides and Nitrides

1999English

Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers

MRS Internet Journal of Nitride Semiconductor Research
1999English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy