Moving Gapless Indirect Excitons in Monolayer Graphene

Nanoscale Research Letters - Germany
doi 10.1186/10.1186/1556-276x-7-599
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Springer Science and Business Media LLC

Related search

Moving Gapless Indirect Excitons in Monolayer Graphene

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2012English

Probing Excitons, Trions, and Dark Excitons in Monolayer WS2 Using Resonance Raman Spectroscopy

English

Magnetic Brightening and Control of Dark Excitons in Monolayer WSe2

Nature Nanotechnology
Electronic EngineeringCondensed Matter PhysicsMaterials ScienceOpticsMolecular Physics,NanoscienceElectricalAtomicBioengineeringNanotechnologyBiomedical Engineering
2017English

Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe2

Physical Review Letters
AstronomyPhysics
2018English

Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2019English

Indirect Excitons in Van Der Waals Heterostructures at Room Temperature

Nature Communications
AstronomyGeneticsMolecular BiologyBiochemistryChemistryPhysics
2018English

Probing Electron Spin Resonance in Monolayer Graphene

Physical Review Letters
AstronomyPhysics
2017English

Ab Initio and Semiempirical Modeling of Excitons and Trions in Monolayer TiS3

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2018English

Sub-THz Characterisation of Monolayer Graphene

Journal of Spectroscopy
OpticsAnalytical ChemistryAtomicSpectroscopyMolecular Physics,
2014English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy