Noise in MgO Barrier Magnetic Tunnel Junctions With CoFeB Electrodes: Influence of Annealing Temperature

Applied Physics Letters - United States
doi 10.1063/1.2749433
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Annealing of CoFeB/MgO Based Single and Double Barrier Magnetic Tunnel Junctions: Tunnel Magnetoresistance, Bias Dependence, and Output Voltage

Journal of Applied Physics
AstronomyPhysics
2009English

The Role of Mg Interface Layer in MgO Magnetic Tunnel Junctions With CoFe and CoFeB Electrodes

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2012English

Understanding Tunneling Magnetoresistance During Thermal Annealing in MgO-based Junctions With CoFeB Electrodes

Physical Review B
2010English

Saturation of VCMA in Out-Of-Plane Magnetized CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

Impedance Spectroscopy of Micron Sized Magnetic Tunnel Junctions With MgO Tunnel Barrier

Applied Physics Letters
AstronomyPhysics
2010English

Magnetic Sensors Based on MgO-Magnetic Tunnel Junctions With Perpendicularly Magnetized CoFeB Sensing Layers

2014English

MgO-based Double Barrier Magnetic Tunnel Junctions With Thin Free Layers

Journal of Applied Physics
AstronomyPhysics
2009English

Influence of MgO Tunnel Barrier Thickness on Spin-Transfer Ferromagnetic Resonance and Torque in Magnetic Tunnel Junctions

Physical Review B
2013English

Room Temperature Magnetic Barrier Layers in Magnetic Tunnel Junctions

Physical Review B
2010English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy