Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes - Japan
doi 10.1143/jjap.51.02bp02
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Japan Society of Applied Physics

Related search

GaAsN Grown by Chemical Beam Epitaxy for Solar Cell Application

2013English

Thermal Stability of CdZnO Thin Films Grown by Molecular-Beam Epitaxy

Applied Surface Science
SurfacesAstronomyCondensed Matter PhysicsInterfacesFilmsCoatingsChemistryPhysics
2010English

Deep Centers in N-GaN Grown by Reactive Molecular Beam Epitaxy

Applied Physics Letters
AstronomyPhysics
1998English

GaAs Grown on GaP Substrate by Molecular Beam Epitaxy.

SHINKU
1985English

Characterization of SnTe Films Grown by Molecular Beam Epitaxy

Brazilian Journal of Physics
AstronomyPhysics
2006English

Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy

Journal of Applied Physics
AstronomyPhysics
2019English

A Novel Growth Method to Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy

Nano Letters
Materials ScienceCondensed Matter PhysicsMechanical EngineeringNanoscienceBioengineeringNanotechnologyChemistry
2018English

Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

Scientific Reports
Multidisciplinary
2016English

P- And N-Type Doping of Non-Polar A-Plane GaN Grown by Molecular-Beam Epitaxy on R-Plane Sapphire

MRS Internet Journal of Nitride Semiconductor Research
2003English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy