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High Quality and Low Thermal Budget Silicon Nitride Deposition Using PECVD for Gate Spacer, Silicide Block and Contact Etch Stopper
doi 10.7567/ssdm.2011.e-3-4
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Date
September 29, 2011
Authors
Y. Nakao
R. Kuroda
H. Tanaka
A. Teramoto
S. Sugawa
T. Ohmi
Publisher
The Japan Society of Applied Physics
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