Amanote Research
Register
Sign In
Ultrahigh-Performance 8-GHz SiGe Power HBT
IEEE Electron Device Letters
- United States
doi 10.1109/led.2006.873766
Full Text
Open PDF
Abstract
Available in
full text
Categories
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Date
May 1, 2006
Authors
Unknown
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Related search
An 18-GHz 300-mW SiGe Power HBT
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
A High-Performance SiGe HBT/BiCMOS Technology
IEEJ Transactions on Electronics, Information and Systems
Electronic Engineering
Electrical
Compact SiGe HBT Low Noise Amplifiers for 3.1-10.6 GHz Ultrawideband Applications
A 219–266 GHz LO-tunable Direct-Conversion IQ Receiver Module in a SiGe HBT Technology
International Journal of Microwave and Wireless Technologies
Electronic Engineering
Electrical
A Low-Power 26-GHz Transformer-Based Regulated Cascode SiGe BiCMOS Transimpedance Amplifier
IEEE Journal of Solid-State Circuits
Electronic Engineering
Electrical
SiGe HBT BiCMOS for 2-160 Gb/S Next Generation Internet (NGI)
250 MHz TO 30 GHz, UNILATERAL CIRCUITMODEL FOR INGAP/GAAS HBT
Progress In Electromagnetics Research C
Optical
Electronic
Magnetic Materials
Modeling of Single-Event Effects in Circuit-Hardened High-Speed SiGe HBT Logic
IEEE Transactions on Nuclear Science
Electronic Engineering
Nuclear
Nuclear Energy
High Energy Physics
Engineering
Electrical
Comparison of Power Gain Performance Between Conventional and Independently Biased HBT Cascode Chips
