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Publications by Ş. Altındal
On the Profile of Frequency and Voltage Dependent Interface States and Series Resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN Heterostructures by Using Current–voltage (I–V) and Admittance Spectroscopy Methods
Microelectronics Reliability
Surfaces
Electronic Engineering
Condensed Matter Physics
Electronic
Molecular Physics,
Nanoscience
Films
Optical
Electrical
Atomic
Magnetic Materials
Nanotechnology
Reliability
Safety
Coatings
Optics
Quality
Risk
Related publications
Current-Transport Mechanisms in the AlInN/AlN/GaN Single-Channel and AlInN/AlN/GaN/AlN/GaN Double-Channel Heterostructures
Thin Solid Films
Surfaces
Alloys
Optical
Interfaces
Metals
Materials Chemistry
Magnetic Materials
Films
Coatings
Electronic
Band Offsets of Non-Polar A-Plane GaN/AlN and AlN/GaN Heterostructures Measured by X-Ray Photoemission Spectroscopy
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
The Effect of Insulator Layer Thickness on the Main Electrical Parameters in (Ni/Au)/AlxGa1−xN/AlN/GaN Heterostructures
Surface and Interface Analysis
Surfaces
Condensed Matter Physics
Interfaces
Materials Chemistry
Films
Coatings
Chemistry
Investigation of the Interface Between Silicon Nitride Passivations and AlGaN/AlN/GaN Heterostructures by C(V) Characterization of Metal-Insulator-Semiconductor-Heterostructure Capacitors
Journal of Applied Physics
Astronomy
Physics
Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/N-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer
Materials Transactions
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
High Voltage (450 V) GaN Schottky Rectifiers
Applied Physics Letters
Astronomy
Physics
Current Status and Preventing Methods of Voltage Sag
IEEJ Transactions on Power and Energy
Electronic Engineering
Power Technology
Electrical
Energy Engineering
Electrical Characterization of MS and MIS Structures on AlGaN/AlN/GaN Heterostructures
Microelectronics Reliability
Surfaces
Electronic Engineering
Condensed Matter Physics
Electronic
Molecular Physics,
Nanoscience
Films
Optical
Electrical
Atomic
Magnetic Materials
Nanotechnology
Reliability
Safety
Coatings
Optics
Quality
Risk
Enhancement-Mode Metal–insulator–semiconductor GaN/AlInN/GaN Heterostructure Field-Effect Transistors on Si With a Threshold Voltage of +3.0 v and Blocking Voltage Above 1000 V
Applied Physics Express
Engineering
Astronomy
Physics
