Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by A. E. Botchkarev
Effect of Ammonia Flow Rate on Impurity Incorporation and Material Properties of Si-Doped GaN Epitaxial Films Grown by Reactive Molecular Beam Epitaxy
Journal of Applied Physics
Astronomy
Physics
Related publications
Fabrication and Characterizations of Nitrogen-Doped BaSi 2 Epitaxial Films Grown by Molecular Beam Epitaxy
Journal of Crystal Growth
Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics
Epitaxial La0.7Sr0.3MnO3 Thin Films Grown on SrTiO3 Buffered Silicon Substrates by Reactive Molecular-Beam Epitaxy
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Deep Centers in N-GaN Grown by Reactive Molecular Beam Epitaxy
Applied Physics Letters
Astronomy
Physics
Magnetic Properties of Ultrathin Magnetite Films Grown by Molecular Beam Epitaxy
IEEE Transactions on Magnetics
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Formation of Large-Grain-Sized BaSi2 Epitaxial Layers Grown on Si(111) by Molecular Beam Epitaxy
Journal of Crystal Growth
Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics
Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy
Journal of Applied Physics
Astronomy
Physics
Structural, Optical and Electronic Properties of Homoepitaxial GaN Nanowalls Grown on GaN Template by Laser Molecular Beam Epitaxy
RSC Advances
Chemistry
Chemical Engineering
Strain of M-Plane GaN Epitaxial Layer Grown on Β-LiGaO2 (100) by Plasma-Assisted Molecular Beam Epitaxy
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Characterization of SnTe Films Grown by Molecular Beam Epitaxy
Brazilian Journal of Physics
Astronomy
Physics
