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Publications by A. E. Oberhofer
Optical Metastability of Subband Gap (2.2 eV) Yellow Luminescence in GaN
Applied Physics Letters
Astronomy
Physics
Related publications
Microscopic Study of Defect Luminescence Between 0.72 - 0.85 eV by Optical Microscopy
Microscopy Research
Interpretation of Luminescence in GaAs : Cr : 0.839 eV and 0.574 eV Lines
Journal de Physique
Yellow–green Luminescence From Isoelectronic Nitrogen Centers in GaP Grown by Molecular‐beam Epitaxy
Journal of Applied Physics
Astronomy
Physics
Subband Gap Carrier Dynamics in Low-Temperature-Grown GaAs
Applied Physics Letters
Astronomy
Physics
Effect of Si Codoping on Eu3+ Luminescence in GaN
Journal of Applied Physics
Astronomy
Physics
Defect-Related Luminescence in Undoped GaN Grown by HVPE
Journal of Electronic Materials
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic
Point-Defect Complexes and Broadband Luminescence in GaN and AlN
Physical Review B
Optical Properties of GaN/Er:GaN/GaN Core-Cladding Planar Waveguides
Applied Physics Express
Engineering
Astronomy
Physics
Luminescence of Eu3+ in GaN(Mg, Eu): Transitions From the 5D1 Level
Applied Physics Letters
Astronomy
Physics