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Publications by A. Haase
Erratum: “Sexithiophene Films on Clean and Oxidized Si(111) Surfaces: Growth and Electronic Structure” [J. Appl. Phys. 96, 2716 (2004)]
Journal of Applied Physics
Astronomy
Physics
Related publications
Erratum: “Influence of N on the Electronic Properties of GaAsN Alloy Films and Heterostructures” [J. Appl. Phys. 102, 103710 (2007)]
Journal of Applied Physics
Astronomy
Physics
Erratum: “Cleaning Graphene Using Atomic Force Microscope” [J. Appl. Phys. 111, 064904 (2012)]
Journal of Applied Physics
Astronomy
Physics
Electronic Structure Evolution During the Growth of Ultrathin Insulator Films on Semiconductors: From Interface Formation to bulklikeCaF2∕Si(111)films
Physical Review B
Comment on “Nitridation Effects on Pb1 Center Structures at SiO2∕Si(100) Interfaces” [J. Appl. Phys. 95, 4096 (2004)]
Journal of Applied Physics
Astronomy
Physics
Electronic Structure, Surface Morphology, and Topologically Protected Surface States of Sb2Te3 Thin Films Grown on Si(111)
Journal of Applied Physics
Astronomy
Physics
Nanotribology of Clean and Oxidized Silicon Surfaces.
Hyomen Kagaku
Publisher’s Note: “Frequency-Domain ‘Single-Shot’ Ultrafast Transient Absorption Spectroscopy Using Chirped Laser Pulses” [J. Appl. Phys. 96, 25 (2004)]
Journal of Applied Physics
Astronomy
Physics
Erratum “Impact of Isovalent Doping on the Trapping of Vacancy and Interstitial Related Defects in Si” [J. Appl. Phys. 113, 113506 (2013)]
Journal of Applied Physics
Astronomy
Physics
Growth and Stability of Bi Films on Si(111) Studied by LEEM
Microscopy and Microanalysis
Instrumentation