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Publications by A.A. Dorofeev

Calculation of the Mixing Resonant-Tunneling Diode Cutoff Frequency for the Equivalent Circuit With Quantum Inductance

Electronic engineering. Series 2. Semiconductor device

English

Investigation of the Effect of the Schottky Fet Active Region Design on Its Thermal Behavior

Electronic engineering. Series 2. Semiconductor device

English

Related publications

Accurate Small-Signal Equivalent Circuit Modeling of Resonant Tunneling Diodes to 110 GHz

IEEE Transactions on Microwave Theory and Techniques

Electronic Engineering

Condensed Matter Physics

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Numerical Modelling of a Graphene - Resonant Tunneling Diode as a High Frequency Oscillator

English

High Frequency Short-Circuit Inductance for Model Transformer

Journal of International Council on Electrical Engineering

English

High Frequency Simulation of Resonant Tunneling Diodes

IEEE Transactions on Electron Devices

Electronic Engineering

Magnetic Materials

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Resonant Tunneling Diode as High Speed Optical/Electronic Transmitter

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Resonant Tunneling Magnetoresistance in Coupled Quantum Wells

Applied Physics Letters

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Resonant Tunneling Self-Assembled Quantum Dots for Memory Elements

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P-Type Doped AlAsSb/GaSb Resonant Tunneling Diode Photodetector for the Mid-Infrared Spectral Region

Advanced Optical Materials

Molecular Physics,

Magnetic Materials

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The Stability of the Self‐consistently Determined Current of a Double‐barrier Resonant‐tunneling Diode

Journal of Applied Physics

English