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Publications by Ali Arslan Kaya

The Electrical, Optical, and Structural Properties of GaN Epitaxial Layers Grown on Si(111) Substrate With Interlayers

Superlattices and Microstructures
Electronic EngineeringElectricalCondensed Matter PhysicsMaterials Science
2009English

Related publications

Buffer Optimization for Crack-Free GaN Epitaxial Layers Grown on Si(1 1 1) Substrate by MOCVD

Journal of Physics D: Applied Physics
SurfacesUltrasonicsCondensed Matter PhysicsAcousticsOpticalMagnetic MaterialsFilmsCoatingsElectronic
2008English

Size- And Shape-Controlled GaN Nanocrystals Grown on Si(111) Substrate by Reactive Epitaxy

Applied Physics Letters
AstronomyPhysics
2004English

Microstructure of GaN Grown on (111) Si by MOCVD

MRS Internet Journal of Nitride Semiconductor Research
1999English

Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates

Acta Physica Polonica A
AstronomyPhysics
2011English

Formation of Large-Grain-Sized BaSi2 Epitaxial Layers Grown on Si(111) by Molecular Beam Epitaxy

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2013English

Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate

Scientific Reports
Multidisciplinary
2017English

Study on AlGaN/GaN Heterostructures Grown on Si Substrate

Journal of the Vacuum Society of Japan
SurfacesInstrumentationInterfacesSpectroscopyMaterials Science
2011English

Preparation and Electrical Properties of Vapor Grown InP and In1-xGaxP Epitaxial Layers

IEEJ Transactions on Fundamentals and Materials
Electronic EngineeringElectrical
1974English

Influence of an Advanced Buffer Layer on the Optical Properties of an InGaN/GaN MQW Grown on a (111) Silicon Substrate

Journal of the Korean Physical Society
AstronomyPhysics
2007English

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