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Publications by Anping Zhang

Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate

Applied Physics Express

English

Study on the Relationship Between Earth Pressure Coefficient and Retaining Wall Displacement Model

DEStech Transactions on Engineering and Technology Research

English

Related publications

Vertical GaN Schottky Diodes Grown on Highly Conductive Ammono-GaN Substrate

Acta Physica Polonica A

English

Effects of Substrate Defects on the Gate Leakage Current of AlGaN/GaN Heterojunction FETs Fabricated on Na Flux Bulk GaN

English

High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

Applied Physics Letters

English

Study on AlGaN/GaN Heterostructures Grown on Si Substrate

Journal of the Vacuum Society of Japan

Instrumentation

Materials Science

English

GaN Schottky Barrier Photodetectors With SiN∕GaN Nucleation Layer

Applied Physics Letters

English

Polarization Effects in AlGaN/GaN and GaN/AlGaN/GaN Heterostructures

Journal of Applied Physics

English

Electroabsorption Modulators Based on Bulk GaN Films and GaN/AlGaN Multiple Quantum Wells

Journal of Applied Physics

English

GaN Avalanche Photodiodes Grown on M-Plane Freestanding GaN Substrate

Applied Physics Letters

English

Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate

English