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Publications by Anthony M. Etzold
Locating Si Atoms in Si-Doped Boron Carbide: A Route to Understand Amorphization Mitigation Mechanism
Acta Materialia
Alloys
Plastics
Polymers
Metals
Optical
Magnetic Materials
Composites
Electronic
Ceramics
Related publications
Apparent Depression of Boron Diffusivity in Doped Oxide-Si System
Denki Kagaku oyobi Kogyo Butsuri Kagaku
High-Velocity Ballistic Impact With Boron Carbide Produces Localized Amorphization
MRS Bulletin
Materials Science
Theoretical Chemistry
Condensed Matter Physics
Physical
Amorphization Threshold in Si-Implanted Strained Sige Alloy Layers
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Zwitterionic Si-C-Si-P and Si-P-Si-P Four-Membered Rings With Two-Coordinate Phosphorus Atoms
Angewandte Chemie
Segregation of Solute Atoms to Dislocations in a Cu-Si Alloy
Transactions of the Japan Institute of Metals
Boron Distributions in Individual Core–shell Ge/Si and Si/Ge Heterostructured Nanowires
Nanoscale
Materials Science
Nanotechnology
Nanoscience
Nanoscale Characterization of Active Doping Concentration in Boron-Doped Individual Si Nanocrystals (Phys. Status Solidi a 23∕2018)
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Photodegradation of Si-Doped GaAs Nanowire
RSC Advances
Chemistry
Chemical Engineering
Oxidation Resistance and Compressive Creep Behavior of Boron Doped Mo{sub 5}Si{sub 3}
