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Publications by Artem I. Baranov
Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Influence of PE-ALD of GaP on the Silicon Wafers Quality
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Related publications
Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer
Journal of Semiconductor Technology and Science
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4h-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding
ECS Solid State Letters
Abrupt GaP/Si Hetero-Interface Using Bistepped Si Buffer
Applied Physics Letters
Astronomy
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Porous NiO–WO3 Heterojunction Nanofibers Fabricated by Electrospinning With Enhanced Gas Sensing Properties
RSC Advances
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Atomic-Level Structural and Electronic Properties of Hybrid Inorganic–Organic ZnO:Hydroquinone Superlattices Fabricated by ALD/MLD
Journal of Physical Chemistry C
Surfaces
Energy
Nanoscience
Theoretical Chemistry
Optical
Magnetic Materials
Films
Nanotechnology
Electronic
Coatings
Physical
Electrical Transport Properties of Isolated Carbon Nanotube/Si Heterojunction Schottky Diodes
Applied Physics Letters
Astronomy
Physics
Microstructure and Mechanical Properties of A7075 Alloy With Additional Si Objects Fabricated by Selective Laser Melting
Materials Transactions
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Interface Properties of SiOxNy Layer on Si Prepared by Atmospheric-Pressure Plasma Oxidation-Nitridation
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
