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Publications by B. Froment

Experimental and Simulation Study of the Schottky Barrier Lowering by Substrate Doping Variation for PtSi Source/Drain SBFETs

European Solid-State Device Research Conference

Electronic Engineering

English

Related publications

Characteristics of N-Type Asymmetric Schottky-Barrier Transistors With Silicided Schottky-Barrier Source and Heavily N-Type Doped Channel and Drain

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Schottky Source/Drain SOI MOSFET With Shallow Doped Extension

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Advantage of Plasma Doping for Source/Drain Extension in Bulk-FinFET

English

Ballistic Electron Emission Microscopy Study of PtSi–n-Si(100) Schottky Diodes

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English

Gate-Field-Induced Schottky Barrier Lowering in a Nanotube Field-Effect Transistor

AIP Conference Proceedings

English

INTERNAL PHOTOEMISSION SPECTROSCOPY FOR a PtSi/p-Si SCHOTTKY JUNCTION

English

Comparison of Raised and Schottky Source/Drain MOSFETs Using a Novel Tunneling Contact Model

English

Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method

English

Variation in Haematology Reporting – A Drain on Clinician Time and Source of Clinician Error

Forensic Medicine

English