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Publications by B. Hekmatshoar
Hall Mobility Measurements in Enhancement-Mode GaAs Field-Effect Transistors With Al2O3 Gate Dielectric
Applied Physics Letters
Astronomy
Physics
Related publications
All-Polymer Field-Effect Transistors Using a Brush Gate Dielectric
Journal of Materials Chemistry C
Materials Chemistry
Chemistry
Demonstration of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (HG TFETs)
Nano Convergence
Materials Science
Engineering
Carrier Mobility in Field-Effect Transistors
Interfacial Gate Resistance in Schottky-Barrier-Gate Field-Effect Transistors
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Impact of the Gate Dielectric on Contact Resistance in High-Mobility Organic Transistors
Advanced Electronic Materials
Optical
Electronic
Magnetic Materials
Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors With La2O3 Gate Dielectric
Journal of Applied Physics
Astronomy
Physics
Dual-Gate Black Phosphorus Field-Effect Transistors With Hexagonal Boron Nitride as Dielectric and Passivation Layers
Overlapping-Gate Architecture for Silicon Hall Bar Field-Effect Transistors in the Low Electron Density Regime
Applied Physics Letters
Astronomy
Physics
Modelling of Insulated-Gate Field-Effect Transistors.
