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Publications by B. Lucznik
Effect of Growth Polarity on Vacancy Defect and Impurity Incorporation in Dislocation-Free GaN
Applied Physics Letters
Astronomy
Physics
Recent Results in the Crystal Growth of GaN at High N2 Pressure
MRS Internet Journal of Nitride Semiconductor Research
Related publications
Dislocation-Free GaN Nanowires
Microscopy and Microanalysis
Instrumentation
Impurity Free Vacancy Disordering of InGaAs Quantum Dots
Journal of Applied Physics
Astronomy
Physics
Morphology, Polarity, and Lateral Molecular Beam Epitaxy Growth of GaN on Sapphire
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Effect of Ammonia Flow Rate on Impurity Incorporation and Material Properties of Si-Doped GaN Epitaxial Films Grown by Reactive Molecular Beam Epitaxy
Journal of Applied Physics
Astronomy
Physics
The Effect of InGaN/GaN MQW Hydrogen Treatment and Threading Dislocation Optimization on GaN LED Efficiency
Journal of Crystal Growth
Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics
Selective Quantum-Well Intermixing in GaAs-AlGaAs Structures Using Impurity-Free Vacancy Diffusion
IEEE Journal of Quantum Electronics
Electronic Engineering
Condensed Matter Physics
Molecular Physics,
Electrical
Atomic
Optics
Dislocation Scattering in GaN
Physical Review Letters
Astronomy
Physics
Thermodynamics of Impurity-Enhanced Vacancy Formation in Metals
Journal of Applied Physics
Astronomy
Physics
Effect of Carbon Incorporation on Electrical Properties of N-Type GaN Surfaces
Journal of Applied Physics
Astronomy
Physics
