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Publications by Byoung Jae Park
Characteristics of Al2O3 Gate Dielectrics Partially Fluorinated by a Low Energy Fluorine Beam
Applied Physics Letters
Astronomy
Physics
Related publications
Memory Characteristics of MOSFETs With Densely Stacked Silicon Nanocrystal Layers in the Gate Oxide Synthesized by Low-Energy Ion Beam
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
The Characteristics of Hole Trapping in HfO2∕SiO2 Gate Dielectrics With TiN Gate Electrode
Applied Physics Letters
Astronomy
Physics
The Characteristics of Fluorinated Gate Dielectric AlGaN/GaN MIS-HEMT
IEICE Electronics Express
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
Materials Fundamentals of Gate Dielectrics
Regioselective Synthesis of Α-Fluorinated Cyclopentenones by Organocatalytic Difluorocyclopropanation and Fluorine-Directed and Fluorine-Activated Nazarov Cyclization
Chemistry - A European Journal
Organic Chemistry
Catalysis
Chemistry
Soft Breakdown of Hafnium Oxynitride Gate Dielectrics
Journal of Applied Physics
Astronomy
Physics
Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
Applied Sciences (Switzerland)
Instrumentation
Materials Science
Fluid Flow
Engineering
Computer Science Applications
Process Chemistry
Transfer Processes
Technology
Measurement of Pore Size and Matrix Characteristics in Low-K Dielectrics by Neutron Contrast Variation
AIP Conference Proceedings
Astronomy
Physics
Low Temperature Fabrication of AlN Film by Irradiation of Low Energy Ion Beam.
Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering
Mechanical Engineering
