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Publications by C. A. Londos

The Annealing Mechanism of the Radiation-Induced Vacancy-Oxygen Defect in Silicon

Journal of Applied Physics
AstronomyPhysics
2012English

Erratum “Impact of Isovalent Doping on the Trapping of Vacancy and Interstitial Related Defects in Si” [J. Appl. Phys. 113, 113506 (2013)]

Journal of Applied Physics
AstronomyPhysics
2013English

Effect of Germanium Doping on the Annealing Characteristics of Oxygen and Carbon-Related Defects in Czochralski Silicon

Journal of Applied Physics
AstronomyPhysics
2010English

Localised Vibrational Mode Spectroscopy Studies of Self-Interstitial Clusters in Neutron Irradiated Silicon

Journal of Applied Physics
AstronomyPhysics
2013English

Strategies to Suppress A-Center Formation in Silicon and Germanium From a Mass Action Analysis Viewpoint

Journal of Materials Science: Materials in Electronics
Electronic EngineeringBiomedical EngineeringCondensed Matter PhysicsBiomaterialsElectronicMolecular Physics,BiophysicsOpticalElectricalAtomicMagnetic MaterialsBioengineeringOptics
2014English

Origin of Infrared Bands in Neutron-Irradiated Silicon

Journal of Applied Physics
AstronomyPhysics
1997English

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