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Publications by C. G Hemmingsson

Deep Levels in Iron Doped N- And P-Type 4h-SiC

Journal of Applied Physics
AstronomyPhysics
2011English

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Major Deep Levels With the Same Microstructures Observed in N-Type 4H–SiC and 6H–SiC

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Metastable Defects in Low-Energy Electron Irradiated N-Type 4h-SiC

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Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes

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The Effects of Displacement Threshold Irradiation Energy on Deep Levels in P-Type 6h-SiC

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Microstructural Interpretation of Ni Ohmic Contact on N-Type 4H–SiC

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Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4h-SiC

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Thermoresistance of P -Type 4h-SiC Integrated MEMS Devices for High-Temperature Sensing

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Vertical Conduction Mechanism of the Epitaxial Graphene/N-Type 4h-SiC Heterojunction at Cryogenic Temperatures

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Ohmic Contacts on P-Type Al-Implanted 4h-SiC Layers After Different Post-Implantation Annealings

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