Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by C. Hodges
On the Link Between Electroluminescence, Gate Current Leakage, and Surface Defects in AlGaN/GaN High Electron Mobility Transistors Upon Off-State Stress
Applied Physics Letters
Astronomy
Physics
Hadronic Jet Production at the CERN Proton-Antiproton Collider
Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics
High Energy Physics
Nuclear
Related publications
Off-State Leakage Current Reduction in AlGaN/GaN High Electron Mobility Transistors by Combining Surface Treatment and Post-Gate Annealing
Semiconductor Science and Technology
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic
Studies of Traps in AlGaN/GaN High Electron Mobility Transistors on Silicon
Dual Barrier InAlN/AlGaN/GaN-on-silicon High-Electron-Mobility Transistors With Pt- And Ni-Based Gate Stacks
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Prostate Specific Antigen Detection Using AlGaN∕GaN High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Effects of Substrate Defects on the Gate Leakage Current of AlGaN/GaN Heterojunction FETs Fabricated on Na Flux Bulk GaN
AlGaN/GaN High-Electron-Mobility Transistor pH Sensor With Extended Gate Platform
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Thermal Properties of AlGaN/GaN High Electron Mobility Transistors on 4H and 6H SiC Substrates
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Gate Current Analysis of AlGaN/GaN on Silicon Heterojunction Transistors at the Nanoscale
Applied Physics Letters
Astronomy
Physics
